2N6668详细规格
- 类别:晶体管(BJT) - 单路
- 描述:TRANS DARL PNP 80V 10A TO-220
- 系列:-
- 制造商:STMicroelectronics
- 晶体管类型:PNP - 达林顿
- 电流_集电极333Ic444(最大):10A
- 电压_集电极发射极击穿(最大):80V
- IbeeeIc条件下的Vce饱和度(最大):3V @ 100mA,10A
- 电流_集电极截止(最大):1mA
- 在某IceeeVce时的最小直流电流增益333hFE444:1000 @ 5A,3V
- 功率_最大:65W
- 频率_转换:-
- 安装类型:通孔
- 封装/外壳:TO-220-3
- 供应商设备封装:TO-220AB
- 包装:管件
- 晶体管(BJT) - 单路 Fairchild Semiconductor TO-226-3、TO-92-3 标准主体 TRANSISTOR PNP 250V 500MA TO-92
- 接线座 - 隔板块 Curtis Industries TO-226-3、TO-92-3 标准主体 TERM BARRIER 19CIRC SGL ROW .325
- Card Edge, Edgeboard Connectors EDAC Inc TO-226-3、TO-92-3 标准主体 CARD EDGE 144PS DL .100X.200 BLK
- 单二极管/齐纳 NXP Semiconductors DO-204AL,DO-41,轴向 DIODE VREG 12V 76MA DO-41
- 矩形- 接头,公引脚 TE Connectivity DO-204AL,DO-41,轴向 CONN HEADR 10POS STR KEY-XY 15AU
- 晶体管(BJT) - 单路 Fairchild Semiconductor TO-226-3、TO-92-3(TO-226AA)成形引线 TRANSISTOR PNP 300V 500MA TO-92
- 接线座 - 隔板块 Curtis Industries TO-226-3、TO-92-3(TO-226AA)成形引线 TERM BARRIER 8CIRC SGL ROW .325
- 单二极管/整流器 NXP Semiconductors SC-79,SOD-523 DIODE SCHOTTKY 30V 200MA SOD523
- 接线座 - 隔板块 Curtis Industries SC-79,SOD-523 TERM BARRIER 10CIRC SGL ROW .325
- 矩形 - 外壳 TE Connectivity TO-220-3 CONN HOUSNG TAB 6POS DUAL KEY-XY
- 接线座 - 隔板块 Curtis Industries TO-220-3 TERM BARRIER 15CIRC SGL ROW .325
- 单二极管/齐纳 Microsemi Commercial Components Group DO-204AL,DO-41,轴向 DIODE ZENER 13V 1W DO-41
- 其它 NXP Semiconductors DIODE SCHOTTKY 70V 70MA SC-79
- 接线座 - 隔板块 Curtis Industries TERM BARRIER 12CIRC SGL ROW .325
- FET - 单 ON Semiconductor TO-226-3、TO-92-3(TO-226AA)成形引线 MOSFET N-CH 60V 200MA TO-92